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Efficacy of single and double SiN[sub x] interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

✍ Scribed by Yun, F.; Moon, Y. -T.; Fu, Y.; Zhu, K.; OzguÌr, UÌ.; MorkocÌ§, H.; Inoki, C. K.; Kuan, T. S.; Sagar, Ashutosh; Feenstra, R. M.

Book ID: 120520636
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 833 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2142074

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