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Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxy

✍ Scribed by Hyun Jong Park; Hong-Yeol Kim; Jun Young Bae; Seonghwan Shin; Jihyun Kim

Book ID: 116630160
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 593 KB
Volume: 350
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.12.029

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