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Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy

✍ Scribed by Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Fang, Z.-Q.; Look, D. C.; Molnar, R. J.; Osinsky, A. V.

No coin nor oath required. For personal study only.

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