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Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy

✍ Scribed by Hacke, P.; Detchprohm, T.; Hiramatsu, K.; Sawaki, N.


Book ID
120346485
Publisher
American Institute of Physics
Year
1993
Tongue
English
Weight
630 KB
Volume
63
Category
Article
ISSN
0003-6951

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Red luminescence from freestanding GaN g
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## Abstract Photoluminescence (PL) spectroscopy was used to study the red luminescence band from freestanding GaN grown on LiAlO~2~ substrate by hydride vapor phase epitaxy. The red luminescence band was observed with its peak at 1.78 eV and 1.85 eV at 10 K and 300 K, respectively. Temperature‐depe