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Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask

✍ Scribed by Polyakov, A. Y.; Markov, A. V.; Mezhennyi, M. V.; Govorkov, A. V.; Pavlov, V. F.; Smirnov, N. B.; Donskov, A. A.; D’yakonov, L. I.; Kozlova, Y. P.; Malakhov, S. S.; Yugova, T. G.; Osinsky, V. I.; Gorokh, G. G.; Lyahova, N. N.; Mityukhlyaev, V. B.; Pearton, S. J.

Book ID: 121840854
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 405 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3072614

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