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Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization

✍ Scribed by Win, P.; Druelle, Y.; Cappy, A.; Cordier, Y.; Favre, J.; Bouillet, C.

Book ID: 115507782
Publisher: American Institute of Physics
Year: 1992
Tongue: English
Weight: 540 KB
Volume: 61
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.107729

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