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Realization of high mobilities at ultralow electron density in GaAs‐Al0.3Ga0.7As inverted heterojunctions

✍ Scribed by Kim, Dojin; Madhukar, A.; Hu, Ke‐Zhong; Chen, Wei

Book ID: 118159446
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 664 KB
Volume: 56
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.103074

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