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Materials and device properties of pseudomorphic InxGa1−xAs/Al0.3Ga0.7As/GaAs high electron mobility transistors (0

✍ Scribed by T. Schweizer; K. Köhler; P. Ganser; A. Hülsmann; P. Tasker

Book ID: 104721979
Publisher: Springer
Year: 1991
Tongue: English
Weight: 445 KB
Volume: 53
Category: Article
ISSN: 1432-0630
DOI: 10.1007/bf00323868

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