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Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator

โœ Scribed by S.F Yoon; A.H.T Kam; B.P Gay; H.Q Zheng; G.I Ng

Book ID
108361685
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
477 KB
Volume
30
Category
Article
ISSN
0026-2692

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