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A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT

โœ Scribed by S.F. Yoon; A.H.T. Kam; H.Q. Zheng; B.P. Gay

Book ID
108360755
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
427 KB
Volume
31
Category
Article
ISSN
0026-2692

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๐Ÿ“œ SIMILAR VOLUMES

Controlled growth of InP/In0.48Ga0.52P q
Controlled growth of InP/In0.48Ga0.52P quantum dots on GaAs substrate
โœ A. Ugur; F. Hatami; W.T. Masselink ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 865 KB

Both the density and the ordering of InP quantum dots (QDs) grown on In 0.48Ga0.52 P/GaAs are controlled through the growth conditions. The control of the alignment of the QDs is achieved by determining the morphology of the In 0.48 Ga 0.52 P buffer through its growth temperature. For buffer layer g