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The electronic structure of modulation-doped In0.53Ga0.47As/n-In0.52Al0.48As heterostructure

โœ Scribed by M. Ayman Magdy; R. A. Al-Khader; M. Tomak


Book ID
105582892
Publisher
Italian Physical Society
Year
1995
Tongue
English
Weight
408 KB
Volume
17
Category
Article
ISSN
0392-6737

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We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t