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Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

✍ Scribed by Junsaku Nitta; Yiping Lin; Takaaki Koga; Tatsushi Akazaki

Book ID
108240575
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
319 KB
Volume
20
Category
Article
ISSN
1386-9477

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Gate control of spin–orbit interaction i
Gate control of spin–orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure
✍ Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Takatomo Enoki πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 124 KB

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In Ga As/In Al As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to t