Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing
β Scribed by Dong Yul Lee; Jong Su Kim; D.L Kim; K.H Kim; J.S Son; I.S Kim; B.K Han; I.H Bae
- Book ID
- 108341664
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 127 KB
- Volume
- 243
- Category
- Article
- ISSN
- 0022-0248
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A new Ξ΄-doped In 0.24 Ga 0.76 As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron m
In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3