𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photoluminescence and photoreflectance of Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures after rapid thermal annealing

✍ Scribed by Dong Yul Lee; Jong Su Kim; D.L Kim; K.H Kim; J.S Son; I.S Kim; B.K Han; I.H Bae


Book ID
108341664
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
127 KB
Volume
243
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


AΞ΄-doped In0.24Ga0.76As/GaAs pseudomorph
✍ Ching-Sung Lee; Wei-Chou Hsu; Sheng San Li; Pin Ho πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 174 KB

A new Ξ΄-doped In 0.24 Ga 0.76 As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron m

Fabrication and characteristics of In0.4
✍ S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 313 KB

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3