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Alloy Scattering Limited Mobility of a Two-Dimensional Electron Gas in SD-Al0.3Ga0.7As/Ga0.87In0.13As/GaAs Structures

โœ Scribed by Keya Bhattacharyya


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
258 KB
Volume
153
Category
Article
ISSN
0370-1972

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## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost