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Dependence of propagation loss on etching depth in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As strip-loaded type waveguides

โœ Scribed by K. H. Park; Y. T. Byun; Y. Kim; S. H. Kim; S. S. Choi; Y. Chung

Publisher
Springer
Year
1995
Tongue
English
Weight
529 KB
Volume
27
Category
Article
ISSN
0306-8919

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## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost