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Characteristics of Gated GaAs/Al0.3Ga0.7As Heterostructures

✍ Scribed by Abd-El Mongy, A. ;Belal, A.A.E. ;Ali, K. ;Long, A.R.

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
180 KB
Volume
187
Category
Article
ISSN
0031-8965

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## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost