GaAs-based In0.29 Al0.71As/In0.3Ga0.7As
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Yi-Jen Chan; Chia-Song Wu; Jen-Inn Chyl; Jia-Lin Shieh
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Article
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1996
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John Wiley and Sons
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English
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## As heierostmctures grown on GaAs sub- strates with a step-graded metamolphic In,Ga, -As buffer were characterized. Cross-sectional TEM micrographs revealed that an unstrained and dislocation-free In,,,Ga,,,As layer used as a buffer can be obtained. A 0.6-pin-long gate HEMTbased on this heterost