Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer
β Scribed by S.H. Hwang; J.C. Shin; J.D. Song; W.J. Choi; J.I. Lee; H. Han; S.-W. Lee
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 166 KB
- Volume
- 78-79
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we
For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In 0.56 Ga 0.44 As resonant tunneling diode structure with an Al 2 O 3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This g