𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer

✍ Scribed by S.H. Hwang; J.C. Shin; J.D. Song; W.J. Choi; J.I. Lee; H. Han; S.-W. Lee


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
166 KB
Volume
78-79
Category
Article
ISSN
0167-9317

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Valence-band structure and optical absor
✍ R. Melliti; P. Tronc; E. Mao; A. Majerfeld; J. Depeyrot πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 218 KB

Hole structure of a GaAs-Al 0.3 Ga 0.7 As p-type multiple quantum well (MQW) subjected to an electric field parallel to the growth axis is studied using the envelope-function approximation and taking into account the valence subband mixing. The system considered in this work consists of five GaAs we

Fabrication of a few-electron In0.56Ga0.
✍ T. Kita; D. Chiba; Y. Ohno; H. Ohno πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 429 KB

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In 0.56 Ga 0.44 As resonant tunneling diode structure with an Al 2 O 3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This g