Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

✍ Scribed by T. Kita; D. Chiba; Y. Ohno; H. Ohno

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 429 KB
• Volume: 40
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.08.140

✦ Synopsis

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In 0.56 Ga 0.44 As resonant tunneling diode structure with an Al 2 O 3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.