Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor with ALD Al2O3 as gate insulator

✍ Scribed by Han-Chung Lin; Wei-E. Wang; Guy Brammertz; Marc Meuris; Marc Heyns

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 640 KB
• Volume: 86
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.03.112