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The temperature dependence of intersubband absorption in a barrier-doped GaAs/Al0.3Ga0.7As quantum well structure

✍ Scribed by F. Szmulowicz; M.O. Manasreh; D.W. Fischer; F. Madarasz; K.R. Evans; E. Stutz; T. Vaughan

No coin nor oath required. For personal study only.

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