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Modulation of the coupling of a near-surface GaAs/Ga0.7Al0.3As quantum well with its free surface

✍ Scribed by F. Houzay; J.M. Moison; K. Elcess; F. Barthe


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
265 KB
Volume
9
Category
Article
ISSN
0749-6036

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A new approach to the cap layer thinning
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Low energy ion beam etching (IBE) at oblique angle at liquid nitrogen temperature has been applied for thinning of the cap layer of GaAs/InGaAs/GaAs (GaAs/AIGaAs/GaAs) heterostructures with near surface quantum wells (QWs) to study dielectric confinement effects . It was shown that this etching prov