We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good
✦ LIBER ✦
Surface morphology and optical property of 1.3 μm In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE
✍ Scribed by Q Lan; Z.C Niu; D.Y Zhou; Y.C Kong; X.D Wang; Z.H Miao; S.L Feng
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 253 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Optical characteristics of In(Ga)As quan
Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5 μm laser diodes
✍
J.S. Yim; J.H. Lee; Y.D. Jang; M.D. Kim; D. Lee; H.D. Kim; S.H. Pyun; W.G. Jeong
📂
Article
📅
2005
🏛
Elsevier Science
🌐
English
⚖ 262 KB
Effects of accumulated strain on the sur
✍
Tao Yang; Jun Tatebayashi; Masao Nishioka; Yasuhiko Arakawa
📂
Article
📅
2008
🏛
Elsevier Science
🌐
English
⚖ 402 KB
We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i