Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5 μm laser diodes

✍ Scribed by J.S. Yim; J.H. Lee; Y.D. Jang; M.D. Kim; D. Lee; H.D. Kim; S.H. Pyun; W.G. Jeong; J.S. Kim; S.U. Hong; D.K. Oh

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 262 KB
• Volume: 36
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2005.02.058

✦ Synopsis

We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good isolation of quantum dots. Continuous-wave lasings are observed at room temperature from laser diodes made of these quantum dots.