We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the hig
Optical properties and carrier dynamics of InAs/InP(1 1 3)B quantum dots emitting between 1.3 and 1.55 μm for laser applications
✍ Scribed by P. Miska; J. Even; C. Paranthoen; O. Dehaese; H. Folliot; S. Loualiche; M. Senes; X. Marie
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 143 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1386-9477
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