𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 μm

✍ Scribed by A.F.G. Monte; J.F.R. Cunha; M.A.P. Soler; S.W. Silva; A.A. Quivy; P.C. Morais

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
209 KB
Volume
36
Category
Article
ISSN
0026-2692

No coin nor oath required. For personal study only.

✦ Synopsis

We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the higher carrier redistribution between the energy levels.

📜 SIMILAR VOLUMES

Effects of accumulated strain on the sur
Effects of accumulated strain on the surface and optical properties of stacked 1.3 μm InAs/GaAs quantum dot structures
✍ Tao Yang; Jun Tatebayashi; Masao Nishioka; Yasuhiko Arakawa 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 402 KB

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i