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Growth and characterization of strained Si1−xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 μm

✍ Scribed by K Bernhard-Höfer; A Zrenner; J Brunner; G Abstreiter; F Wittmann; I Eisele

No coin nor oath required. For personal study only.

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Growth and characterization of strained Si1−xGex multi-quantum-well waveguide photodetectors on (1&#xa0;1&#xa0;0) Si for 1.3 and 1.55&#xa0;μm