𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Step-bunching and strain effects in Si1−xGex layers and superlattices on vicinal Si(0 0 1)

✍ Scribed by M. Mühlberger; C. Schelling; G. Springholz; F. Schäffler


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
267 KB
Volume
13
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Intersubband transitions in strained Si/
✍ Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained

Wetting layer formation in superlattices
✍ A.I. Nikiforov; V.V. Ulyanov; V.A. Timofeev; O.P. Pchelyakov 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 190 KB

The influence of parameters of germanium deposition on wetting layer thickness was studied during the growth on the Si(1 0 0) surface. A non-monotone dependence of the thickness on growth temperature was discovered and accounted for by changing the mechanism of the layer-by-layer growth. The conclus