The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained
✦ LIBER ✦
Step-bunching and strain effects in Si1−xGex layers and superlattices on vicinal Si(0 0 1)
✍ Scribed by M. Mühlberger; C. Schelling; G. Springholz; F. Schäffler
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 267 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Intersubband transitions in strained Si/
✍
Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis
📂
Article
📅
2000
🏛
Elsevier Science
🌐
English
⚖ 151 KB
Hydrogen passivation of interfacial gap
✍
Bert Stegemann; Andreas Schoepke; Daniel Sixtensson; Benjamin Gorka; Thomas Luss
📂
Article
📅
2009
🏛
Elsevier Science
🌐
English
⚖ 356 KB
Strain relaxation of epitaxial CoSi2 and
✍
D.O. Shin; M.R. Sardela Jr.; S.H. Ban; N.-E. Lee; K.-H. Shim
📂
Article
📅
2004
🏛
Elsevier Science
🌐
English
⚖ 324 KB
Residual strain in Ge films grown by sur
✍
Tobias F. Wietler; Eberhard Bugiel; Karl R. Hofmann
📂
Article
📅
2006
🏛
Elsevier Science
🌐
English
⚖ 258 KB
Directional scrolling of hetero-films on
✍
L. Zhang; E. Deckardt; A. Weber; C. Schönenberger; D. Grützmacher
📂
Article
📅
2006
🏛
Elsevier Science
🌐
English
⚖ 205 KB
Wetting layer formation in superlattices
✍
A.I. Nikiforov; V.V. Ulyanov; V.A. Timofeev; O.P. Pchelyakov
📂
Article
📅
2009
🏛
Elsevier Science
🌐
English
⚖ 190 KB
The influence of parameters of germanium deposition on wetting layer thickness was studied during the growth on the Si(1 0 0) surface. A non-monotone dependence of the thickness on growth temperature was discovered and accounted for by changing the mechanism of the layer-by-layer growth. The conclus