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Intersubband transitions in strained Si/Si1 − xGex/Si quantum wells

✍ Scribed by Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
151 KB
Volume
28
Category
Article
ISSN
0749-6036

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✦ Synopsis

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained for a light polarization vector parallel or perpendicular to the growth direction. Comparison is made with other theories and experiment.

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