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Theory of valence and conduction band offsets in Si/Si 1 − yCy heterostructures

✍ Scribed by A.J. Ekpunobi; A.O.E. Animalu

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
55 KB
Volume
31
Category
Article
ISSN
0749-6036

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✦ Synopsis

We investigate the suitability of Si 1-y C y for n-channel electronic devices by calculating the band offsets of Si 1-y C y layers grown on silicon. A reformulated tight binding method with measured spectroscopic term values is employed for calculation of valence band offsets. Calculation of conduction band offsets gives 6.8y(eV) in good agreement with MOSC-V measurements of 6.5y(eV). We find CBO : VBO to be -7 : 3 for low carbon concentrations.

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