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Band offsets and properties ofSi1 − xGex/Si material systems

✍ Scribed by A.J. Ekpunobi; A.O.E. Animalu

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
188 KB
Volume
29
Category
Article
ISSN
0749-6036

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✦ Synopsis

Following the upsurge in the study of Si 1-x Ge x /Si material systems for high-speed applications, we calculate the band offsets using reformulated tight-binding methods. The calculated value of 0.78 eV for the valence band offset (VBO) of pure substances is in excellent agreement with recent experimental measurements. The VBO for alloy interfaces is 0.78x. We apply the VBO and conduction band offsets (CBO) to shift in photoluminescence and electron confinement in microstructures respectively. The calculated VBO is strongly dependent on the precursor flux ratio.

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