๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems

โœ Scribed by A.J Ekpunobi; A.O.E Animalu

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
74 KB
Volume
31
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

โœฆ Synopsis

We have calculated band offsets of AlGaAs/GaAs and AlGaN/GaN systems using the recently reformulated tight binding method. The valence band offset (VBO) of the Al 0.2 Ga 0.8 As/GaAs system was obtained as 0.03 eV in agreement with the experimental value of 0.03 eV. The VBO for Al x Ga 1-x N/GaN is predicted as 0.3x eV. The engineering of the band offsets has enabled us to infer that the VBO of AlGaAs/GaAs solar cells increases with the bandgap of the window, hence the spectral response extends to higher photon energies. Also, the conduction band offset of AlGaN/GaN takes most of the band offset, making the material suitable for n-channel electronic devices.

๐Ÿ“œ SIMILAR VOLUMES

Band offsets and properties ofSi1 โˆ’
Band offsets and properties ofSi1 โˆ’ xGex/Si material systems
โœ A.J. Ekpunobi; A.O.E. Animalu ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 188 KB

Following the upsurge in the study of Si 1-x Ge x /Si material systems for high-speed applications, we calculate the band offsets using reformulated tight-binding methods. The calculated value of 0.78 eV for the valence band offset (VBO) of pure substances is in excellent agreement with recent exper