✦ LIBER ✦
A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p–Si/Si1 − xGex/p–Si selectively doped double heterojunctions structures
✍ Scribed by Georgios Hionis; Georgios P. Triberis
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 143 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrödinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulation parameters involved, i.e. the well width, the spacer thickness and the doping concentration, for x = 0.2. We give physical interpretations of the interesting characteristics observed. Our results are in very good agreement with experiment.