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Hole subband non-parabolicities in strained Si/Si1 − xGexquantum wells

✍ Scribed by G. Hionis; G.P. Triberis

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
191 KB
Volume
24
Category
Article
ISSN
0749-6036

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✦ Synopsis

We study the hole subband non-parabolicities in undoped pseudomorphic Si/Si 1-x Ge x quantum wells, strained in the growth direction 100 . We solve exactly the multiband effective mass equation that describes the heavy, light and split-off hole valence bands. The symmetries of the Luttinger-Kohn Hamiltonian of the system are used to decouple the degenerate subbands. We calculate the in-plane dispersion relations, investigate the importance of the inclusion of the split-off hole valence band in the Hamiltonian and comment on the resulted non-parabolicities. Resonance states are also obtained.

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