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Low temperature hole mobility in strained p-Si/Si1 − xGex/p-Si selectively doped double heterojunctions

✍ Scribed by G. Hionis; G.P. Triberis

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
119 KB
Volume
24
Category
Article
ISSN
0749-6036

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✦ Synopsis

We present a systematic theoretical study of the low-temperature (T = 0 K) quasi-twodimensional-hole gas mobility in strained p-Si/Si 0.8 Ge 0.2 /p-Si selectively doped double heterojunctions. Ionized-impurity (remote and background), interface-roughness and alloyscattering mechanisms are taken into account. In our calculations we use self-consistently calculated wavefunctions and a multi-subband transport model. We investigate the mobility dependence on the structural parameters, such as the spacer thickness and the well width. We comment on the significance of every scattering mechanism looking for the maximum hole mobility in these systems. Alloy scattering seems to be the main mobility-limiting mechanism resulting in a hole mobility which increases with the spacer thickness and the well width. Our theoretical results are consistent with experiment.

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