Arguments for p-type Si 1 − xGe x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared
✍ Scribed by M.A Gadir; P Harrison; R.A Soref
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 366 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
✦ Synopsis
An analysis, by a carrier scattering approach, of the thermionic emission contribution to the dark current is carried out in conventional bound-to-continuum quantum well infrared photodetectors (QWIPs). It is found that the thermionic emission increases with increasing temperature or when extending the detection wavelength from mid-to far-infrared. Considering p-type instead of n-type material, however, the increased effective mass decreases the thermionic emission. Designs for mid-and far-infrared p-type QWIPs based on the Si 1-x Ge x /Si system are discussed for both normal and non-normal incident geometries.