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Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(1 1 1), Si(1 1 0), and Si(1 0 0)

✍ Scribed by Bert Stegemann; Andreas Schoepke; Daniel Sixtensson; Benjamin Gorka; Thomas Lussky; Manfred Schmidt

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 356 KB
Volume: 41
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2008.08.012

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Hydrogen passivation of interfacial gap state defects at UHV-prepared ultrathin SiO2 layers on Si(1 1 1), Si(1 1 0), and Si(1 0 0)