We report the successful fabrication of a V-groove Al 0.5 Ga 0.5 As/GaAs/Al 0.5 Ga 0.5 As quantum wire system and the temperature-dependent photoluminescence (PL) measurement. The PL spectra are dominated by four features at 681, 642, 635 and 621 nm attributed to the luminescences from quantum wire,
High Gm In0.5Al0.5As/In0.5Ga0.5As high electron mobility transistors grown lattice-mismatched on GaAs substrates
β Scribed by T. Mishima; K. Higuchi; M. Mori; M. Kudo
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 499 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0022-0248
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