We use time-resolved photoluminescence spectroscopy to probe the relaxation of excited states in In 0.5 Al 0.04 Ga 0.46 As/Al 0.08 Ga 0.92 As self-assembled quantum dots. The relaxation rate of excitons confined to the quantum dots increases by nearly an order of magnitude as the energy of the state
Piezoelectric Effects on the Electron–Hole Dipole in In0.5Ga0.5As/GaAs Self-Assembled Quantum Dots
✍ Scribed by A. Levin; A. Patanè; F. Schindler; A. Polimeni; L. Eaves; P.C. Main; M. Henini
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 81 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In 0.5 Ga 0.5 As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respect to the direction of the electric field is observed in both cases. We show that the (100) dots have an almost zero permanent electron-hole dipole moment. This result indicates that the recently reported "inverted electron-hole alignment" [Phys. Rev. Lett. 84, 733 (2000)] is not a general property of QDs. By comparing the QCSS for the (100) and (311)B dots, we propose that in the dots grown on the high index plane, the electron and hole wavefunctions are displaced by a strain-induced piezoelectric field.
📜 SIMILAR VOLUMES
The photoluminescence (PL) of In 0.55 Al 0.45 As/Al 0.5 Ga 0.5 As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, ind