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Excited State Dynamics in In0.5Al0.04Ga0.46As/Al0.08Ga0.92As Self-Assembled Quantum Dots

✍ Scribed by L.M. Smith; K. Leosson; J. Erland; J.R. Jensen; J.M. Hvam; V. Zwiller

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
98 KB
Volume
224
Category
Article
ISSN
0370-1972

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✦ Synopsis

We use time-resolved photoluminescence spectroscopy to probe the relaxation of excited states in In 0.5 Al 0.04 Ga 0.46 As/Al 0.08 Ga 0.92 As self-assembled quantum dots. The relaxation rate of excitons confined to the quantum dots increases by nearly an order of magnitude as the energy of the states approaches the top of the quantum dot potential. This dramatic change in the dynamics of these states reflects the increasing complexity of the states localized near the top of the quantum dots.

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