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Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates

✍ Scribed by Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Wu, J.; Zhu, Z. P.; Lin, L. Y.

No coin nor oath required. For personal study only.

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