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Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

✍ Scribed by Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Guo, S. L.; Chu, J. H.

Book ID: 118147065
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 437 KB
Volume: 100
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2222404

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