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Zero-field spin splitting in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates using Shubnikov–de Haas measurements

✍ Scribed by Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.; Lin, L. Y.; Jiang, C. P.; Guo, S. L.; Chu, J. H.

No coin nor oath required. For personal study only.

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