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Unstrained, modulation-doped, In/sub 0.3/Ga/sub 0.7/As/In/sub 0.29/Al/sub 0.71/As field-effect transistor grown on GaAs substrate

✍ Scribed by N. Tien; J. Chen; J. Fernandez; H. Wieder

No coin nor oath required. For personal study only.

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