✦ LIBER ✦

Transport properties of modulation-doped InAs-inserted-channel In[sub 0.75]Al[sub 0.25]As/In[sub 0.75]Ga[sub 0.25]As structures grown on GaAs substrates

✍ Scribed by Richter, A.; Koch, M.; Matsuyama, T.; Heyn, Ch.; Merkt, U.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Fabrication of In/sub 0.25/Ga/sub 0.75/A

✍ Shoji, H.; Uchida, T.; Kusunoki, T.; Matsuda, M.; Kurakake, H.; Yamazaki, S.; Na 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 335 KB

Unstrained, modulation-doped, In/sub 0.3

✍ N. Tien; J. Chen; J. Fernandez; H. Wieder 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 305 KB

25.5% efficient Ga/sub 0.35/In/sub 0.65/

✍ Dimroth, F.; Schubert, U.; Bett, A.W. 📂 Article 📅 2000 🏛 IEEE 🌐 English ⚖ 101 KB

Low-threshold terahertz quantum-cascade

✍ Wienold, M.; Schrottke, L.; Giehler, M.; Hey, R.; Anders, W.; Grahn, H. T. 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 492 KB

DC and RF performance of LP-MOCVD grown

✍ Young-Jin Jeon, ; Yoon-Ha Jeong, ; Bumman Kim, ; Young-Gi Kim, ; Won-Pyo Hong, ; 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 438 KB

Carrier capture and escape processes in

✍ Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 64 KB