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Enhancement mode metamorphic Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As HEMT on GaAs substrate with high breakdown voltage

✍ Scribed by Boudrissa, M.; Delos, E.; Cordier, Y.; Theron, D.; De Jaeger, J.C.

No coin nor oath required. For personal study only.

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