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MBE growth and device characteristics of InAlN/GaN HFETs

✍ Scribed by M. Higashiwaki; T. Matsui

Book ID: 104557465
Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 132 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461389

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