Device characteristics of InAlSb/InAs and InAlSb/InAsSb HFETs

✍ Scribed by Chen, P.-Y.; Chyi, J.-I.; Hsin, Y.-M.; Lin, H.-K.; Ho, H.-C.; Gao, Z.-Y.

• Book ID: 120771651
• Publisher: The Institution of Electrical Engineers
• Year: 2013
• Tongue: English
• Weight: 334 KB
• Volume: 49
• Category: Article
• ISSN: 0013-5194
• DOI: 10.1049/el.2013.0788