MBE growth and applications of cubic AlN/GaN quantum wells
✍ Scribed by As, Donat J.; Mietze, Christian
- Book ID
- 120463830
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 513 KB
- Volume
- 210
- Category
- Article
- ISSN
- 0031-8965
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📜 SIMILAR VOLUMES
## Abstract We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C‐SiC (001) substrate. For high‐quality c‐AlN layers reflection high‐electron energy diffraction (RHEED) patterns in all azimuths show RHEED patter
## Abstract We report on the molecular‐beam epitaxial growth, fabrication and characterization of AlN/GaN photovoltaic quantum well infrared photodetectors operating at 1.55 µm. Devices display a spectrally‐narrow photovoltaic response to p‐polarized light in the near infrared at room temperature.