𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MBE growth and applications of cubic AlN/GaN quantum wells

✍ Scribed by As, Donat J.; Mietze, Christian


Book ID
120463830
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
513 KB
Volume
210
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


DFT modeling of AlN/GaN multi-quantum we
✍ Strak, Pawel; Kempisty, Pawel; Ptasinska, Maria; Krukowski, Stanislaw 📂 Article 📅 2013 🏛 John Wiley and Sons 🌐 English ⚖ 311 KB
MBE growth of cubic AlN on 3C-SiC substr
✍ Schupp, Thorsten ;Rossbach, Georg ;Schley, Pascal ;Goldhahn, Rüdiger ;Röppischer 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 312 KB

## Abstract We present our recent results on the growth of cubic AlN (001) layers by plasma assisted molecular beam epitaxy (PAMBE) using freestanding 3C‐SiC (001) substrate. For high‐quality c‐AlN layers reflection high‐electron energy diffraction (RHEED) patterns in all azimuths show RHEED patter

MBE growth of AlN/GaN-based photovoltaic
✍ Monroy, E. ;Guillot, F. ;Baumann, E. ;Giorgetta, F. R. ;Hofstetter, D. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 370 KB

## Abstract We report on the molecular‐beam epitaxial growth, fabrication and characterization of AlN/GaN photovoltaic quantum well infrared photodetectors operating at 1.55 µm. Devices display a spectrally‐narrow photovoltaic response to p‐polarized light in the near infrared at room temperature.