𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

✍ Scribed by Lee, Suk-Hun ;Lee, Hyun-Hwi ;Jung, Jong-Jae ;Moon, Young-Bu ;Kim, Tae Hoon ;Baek, Jong Hyeob ;Yu, Young Moon


Book ID
105362748
Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
191 KB
Volume
201
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Investigation of buffer structures for t
✍ Yoshida, Seikoh ;Katoh, Sadahiro ;Takehara, Hironari ;Satoh, Yoshihiro ;Li, Jian πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 333 KB

## Abstract In order to obtain a high quality thick GaN layer on a 2‐inch Si substrate without any crack, we investigated three kinds of buffer layer (AlGaN graded structure, AlN/GaN super lattice (SL) structure, and AlN/thick GaN/AlN structure) using a metal‐organic chemical vapor deposition (MOCV